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Space Qualified MOSFETs - Page 22

317 Space Qualified MOSFETs from 6 Manufacturers meet your specification.
IRHM57264SE Image
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Infineon Technologies - IRHM57264SE

Space Qualified MOSFETs from Infineon Technologies
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Description:250 V, 45 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
66 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM57Z60 Image
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Infineon Technologies - IRHM57Z60

Space Qualified MOSFETs from Infineon Technologies
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Description:30 V, 200 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
9.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM7054 Image
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Infineon Technologies - IRHM7054

Space Qualified MOSFETs from Infineon Technologies
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Description:60 V, 200 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
300 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM7064 Image
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Infineon Technologies - IRHM7064

Space Qualified MOSFETs from Infineon Technologies
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Description:60 V, 270 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
21 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM7130 Image
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Infineon Technologies - IRHM7130

Space Qualified MOSFETs from Infineon Technologies
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Description:100 V, 45 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM7150 Image
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Infineon Technologies - IRHM7150

Space Qualified MOSFETs from Infineon Technologies
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Description:100 V, 160 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
34 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
76 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM7230 Image
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Infineon Technologies - IRHM7230

Space Qualified MOSFETs from Infineon Technologies
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Description:200 V, 50 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
49 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM7250 Image
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Infineon Technologies - IRHM7250

Space Qualified MOSFETs from Infineon Technologies
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Description:200 V, 170 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM7260 Image
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Infineon Technologies - IRHM7260

Space Qualified MOSFETs from Infineon Technologies
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Description:200 V, 290 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
77 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHNMC9A7120 Image
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Infineon Technologies - IRHNMC9A7120

Space Qualified MOSFETs from Infineon Technologies
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Description:100 V, 23 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
55 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
54 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.2C
more info
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