1. Home
  2. Electrical / Electronic Components
  3. Space Qualified MOSFETs
Filters

Space Qualified MOSFETs - Page 25

317 Space Qualified MOSFETs from 6 Manufacturers meet your specification.
IRHE57034 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHE57034

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:60 V, 45 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11.7 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
80 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
18-pin LCC
more info
IRHMS57260SE Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHMS57260SE

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:200 V, 165 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
44 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHMS57160 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHMS57160

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:100 V, 160 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
14 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
more info
IRHML597160 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHML597160

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:-100 V, 170 nC, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-45 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
50 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Tabless SMD
more info
IRHE9130 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHE9130

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:Radiation Hardened P-Channel MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.5 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
350 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
18-pin LCC
more info
IRHNA5S97260 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHNA5S97260

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:-200 V, 180 nC, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-33.5 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
102 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHNA67160 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHNA67160

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:100 V, 170 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
10 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHNA597Z60 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHNA597Z60

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:-30 V, 220 nC, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-56 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
13 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHN7230 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHN7230

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:200 V, 50 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
490 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-1
more info
IRHN7250 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHN7250

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:200 V, 170 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-1
more info
Have a Custom Requirement?

Filters

Segment

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current (A)

Apply

Drain Source Breakdown Voltage (V)

Apply

Channel Configuration

Drain Source Resistance (milliohm)

Apply

Gate Source Voltage (V)

Apply

Gate Charge (nC)

Apply

Power Dissipation (W)

Apply

RoHS Compliant

Qualification

Package Type

MOSFETs Directory