Space Qualified MOSFETs

355 Space Qualified MOSFETs for Space Applications from 6 manufacturers listed on SatNow

Space-Qualified MOSFETs are semiconductor switching devices designed to control power efficiently with high reliability in space environments. These MOSFETs are manufactured using radiation-hardened technologies to ensure stable performance under extreme conditions such as temperature variations and ionizing radiation. Space-Qualified MOSFETs from multiple manufacturers are listed on SATNow. Use the filters to select MOSFET products based on your requirement. View product details, download datasheets, compare products, get quotes and pricing for matching products. SATNow has compiled this list of products specifically for Space and Satellite Applications.

355 Space Qualified MOSFETs from 6 Manufacturers
355 Products from 6 Manufacturers
Page 1 of 23
Description:60 V Radiation Hardened N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750E
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
24 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
176 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
Description:250 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
12.4 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
210 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD.5
more info
Description:50 V Space Qualified N-channel MOSFET for Power Management

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
0.20 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
10000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.225 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3
more info
Description:60 V Radiation Hardened Logic Level Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement Mode
Space Standard:
MIL-STD-750, MIL-PRF-19500
Transistor Polarity:
N-Channel, P-Channel
Number of Channel:
Dual
Continous Drain Current:
-0.65 to 0.89 A
Drain Source Breakdown Voltage:
-60 to 60 V
Drain Source Resistance:
750 to 1600 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
LCC-6
more info
Advertisement
Description:45 V P-Channel Enhancement Mode Power MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Continous Drain Current:
0.095 to 0.15 A
Drain Source Breakdown Voltage:
45 to 60 V
Drain Source Resistance:
14 to 28 Ohms
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
0.32 to 0.83 W
Package:
LCC3
more info
Description:N-Channel Radiation Hardened MOSFET from 7.4 to 50 nC

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/701
Transistor Polarity:
N-Channel
Forward Transconductance:
8.7 s
Continous Drain Current:
10 uA
Drain Source Breakdown Voltage:
100 V
Gate to Drain Charge:
20 nC
Drain Source Resistance:
0.16 Ohms
Gate to Source Charge:
7.4 nC
Turn on Delay Time:
25 nS
Turn off Delay Time:
35 nS
Recovery Time:
202 nS
Rise Time:
100 nS
Fall Time:
30 nS
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
more info
Description:100 V Radiation-Hardened P-Channel Power MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-STD-750E
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
34 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
75 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
176 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
Description:-50 V Space Qualified P-channel MOSFET for Power Management

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
-0.13 A
Drain Source Breakdown Voltage:
-50 V
Drain Source Resistance:
10000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.225 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3
more info
Advertisement
Description:Radiation-Hardened N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel, P-Channel
Number of Channel:
Quad
Continous Drain Current:
-2.8 to 4.6 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
270 to 1200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
more info
Description:N-Channel Radiation Hardened MOSFET from 16 to 48 nC

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/705
Transistor Polarity:
N-Channel
Forward Transconductance:
5 s
Continous Drain Current:
10 uA
Drain Source Breakdown Voltage:
130 V
Gate to Drain Charge:
18 nC
Drain Source Resistance:
0.54 Ohms
Gate to Source Charge:
16 nC
Turn on Delay Time:
20 nS
Turn off Delay Time:
25 nS
Recovery Time:
200 nS
Rise Time:
70 nS
Fall Time:
35 nS
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
Description:100 V Rad Hard N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-STD-750E
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
48 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
63 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
170 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
Description:60 V Space Qualified N-channel MOSFET for Power Management

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
0.115 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
7500 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.30 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3
more info
Advertisement
Description:Radiation-Hardened 2N-2P Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement Mode
Space Standard:
MIL-STD-750
Transistor Polarity:
N-Channel, P-Channel
Number of Channel:
Quad
Continous Drain Current:
-2.2 to 3 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
600 to 1100 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
more info
Description:N-Channel Radiation Hardened MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Space Standard:
MIL-PRF-19500/703
Transistor Polarity:
N-Channel
Forward Transconductance:
16 s
Continous Drain Current:
10 uA
Drain Source Breakdown Voltage:
60 V
Gate to Drain Charge:
15 nC
Drain Source Resistance:
0.06 Ohms
Gate to Source Charge:
10 nC
Turn on Delay Time:
25 nS
Turn off Delay Time:
35 nS
Recovery Time:
125 nS
Rise Time:
100 nS
Fall Time:
30 nS
Temperature operating range:
-55 to 150 Degree C
Package:
TO-276AA, SMD-0.5
more info
Description:100 V Radiation Hardened P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Space Standard:
MIL-STD-750E
Transistor Polarity:
P-Channel
Number of Channel:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
300 milliohm
Gate Source Voltage:
-18 to 18 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257
more info
Advertisement

What are Space-Qualified MOSFETs ?

MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are semiconductor devices used for switching and amplification by controlling current flow through an electric field. They operate by applying a voltage to the gate terminal, which modulates the conductivity of a channel between the drain and source terminals. The insulated gate structure results in high input impedance, enabling efficient control with minimal gate current. MOSFETs are widely used in both low-power and high-power electronic systems due to their fast switching characteristics and scalability.

In power electronics and RF systems, MOSFETs play a critical role in voltage regulation, power conversion and signal switching. Their performance is influenced by channel structure, carrier mobility, and parasitic capacitances, which affect switching speed, conduction losses and thermal behavior. Proper selection of MOSFET parameters ensures reliable operation, efficient power handling and compatibility with system-level electrical and environmental requirements.

Key Specifications of Space-Qualified MOSFETs:

  • Types of MOSFET: Defines the structural and operational category, such as enhancement-mode or depletion-mode devices. The type determines default conduction state and control behavior, influencing circuit design and switching strategy.
  • Transistor Polarity: Specifies whether the MOSFET is an N-channel or P-channel device. This parameter affects current flow direction, drive requirements, and efficiency, with each polarity offering distinct advantages depending on the application topology.
  • Continuous Drain Current: Represents the maximum current the device can conduct continuously under specified thermal conditions. It is a key factor in determining load handling capability and ensuring safe operation without exceeding thermal limits.
  • Drain Source Breakdown Voltage: Indicates the maximum voltage the MOSFET can withstand between drain and source without entering breakdown. This parameter is critical for ensuring voltage margin and protecting the device in high-voltage environments.
  • Gate Source Voltage: Defines the allowable voltage range between the gate and source terminals. Proper gate drive within this limit is essential to avoid gate oxide damage and to ensure reliable switching performance.
  • Package Type: Describes the physical form factor and enclosure of the MOSFET. Package type influences thermal dissipation, parasitic inductance, mechanical integration, and suitability for high-frequency or high-power applications.

The Largest Database of MOSFETs

SatNow has listed MOSFETs from the leading manufacturers and made them searchable by specification. You can enter the key parameters and the search tool will scan catalogs from the leading manufacturers to identify products that meet your spec. Once you find MOSFETs that meet your requirement, you can view product information, download datasheets or request quotations. Quotation requests will be routed to the manufacturer of the product who will get back to you directly. The quotation will also be routed to distributors of the product in your region.

Filters

Space Standard

Transistor Polarity

Number of Channel

Continous Drain Current (A)

Apply

Drain Source Breakdown Voltage (V)

Apply

Drain Source Resistance (milliohm)

Apply

Gate Source Voltage (V)

Apply

Gate Charge (nC)

Apply

Power Dissipation (W)

Apply

RoHS Compliant

Qualification

Package Type