These products can be used in Satellites

Space Qualified MOSFETs

317 Space Qualified MOSFETs for Space Applications from 6 manufacturers listed on SatNow

MOSFETs for space applications from multiple manufacturers are listed on SATNow. Use the filters to select space qualified MOSFET products based on your requirement. View product details, download datasheets, compare products, get quotes and pricing for matching products. SATNow has compiled this list of products specifically for Space and Satellite Applications.

Description:60 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
6.1 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
Description:250 V N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12.4 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
210 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD.5
more info
Description:50 V N-Channel MOSFET for Power Management Applications
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.2 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
10000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.225 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3
more info
Description:100 V Radiation Hardened P-Channel MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
300 milliohm
Gate Source Voltage:
-18 to 18 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257
more info
Description:P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Continous Drain Current:
0.095 to 0.15 A
Drain Source Breakdown Voltage:
45 to 60 V
Drain Source Resistance:
14 to 28 Ohms
Gate Source Voltage:
±30 V
Power Dissipation:
0.32 to 0.83 W
Package:
LCC3
more info
Description:100 V Through Hole N-Channel Rad Hard MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
22 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
80 mOhms
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
Description:AEC-Q101 Qualified P-Channel Enhancement MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.13 A
Drain Source Breakdown Voltage:
-50 V
Drain Source Resistance:
10000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.225 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3
more info
Description:Radiation Hardened 60 V N-channel Power MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
76 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD.5
more info
Description:100 V Surface Mount N-Channel Rad Hard MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
22 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
80 mOhms
more info

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