Space Qualified Diodes

3,163 Space Qualified Diodes for Space Applications from 12 manufacturers listed on SatNow

Space-Qualified Diodes are semiconductor devices designed to allow current flow in one direction while providing high reliability in harsh space environments. These diodes are manufactured using radiation-hardened processes to ensure stable electrical performance under extreme temperature, vacuum and radiation exposure. Space-Qualified Diodes from multiple manufacturers are listed on SATNow. Use the filters to select diode products based on your requirement. View product details, download datasheets, compare products, get quotes and pricing for matching products. SATNow has compiled this list of products specifically for Space and Satellite Applications.

3,163 Space Qualified Diodes from 12 Manufacturers
3,163 Products from 12 Manufacturers
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Description:1.55-2.25 V Ultrafast Recovery Diode

Product Specs

Section:
Power Diode
Types of Diode:
Fast Recovery Diode
Configuration of Diode:
Single Diode
Forward Current:
22 A
Forward Voltage:
1.55 to 2.25 V
Reverse Current:
10 uA
Reverse Voltage:
600 V
Repetitive Peak Reverse Voltage:
600 V
Non-Repetitive Peak Forward Current:
225 A
Recovery Time:
60 to 165 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Applications:
Reduced RFI and EMI, Reduced Snubbing, Extensive Characterization of Recovery Parameters, Hermetic
Space Standard:
MIL-STD-750, MIL-PRF-19500
Package:
TO-254AA
more info
Description:200 V Radiation-Hardened Fast Recovery Rectifier

Product Specs

Section:
Power Diode
Types of Diode:
Fast Recovery Diode
Configuration of Diode:
Dual Diode
Forward Current:
20 to 40 A
Forward Voltage:
0.66 to 1.25 V
Reverse Current:
30 to 300 uA
Repetitive Peak Reverse Voltage:
200 V
Non-Repetitive Peak Forward Current:
300 A
Recovery Time:
60 ns
Temperature operating range:
-65 to 175 Degree C
Qualification:
ESCC
RoHS Compliant:
Yes
Space Standard:
ESCC-5103/033, ESCC-5000
Package:
TO-254AA
more info
Description:Space-Qualified Silicon Schottky Diode

Product Specs

Section:
RF Diode
Types of Diode:
Schottky Diode
Forward Current:
3.0 to 6.0 A
Reverse Current:
0.4 to 20 mA
Temperature operating range:
-65 to 175 Degree C
Applications:
Switching Power Supply, Converters, Free-Wheeling Diodes, Polarity Protection Diode
Space Standard:
MIL-PRF-19500
more info
Description:O.8 V Space-Qualified Silicon Bypass Diode

Product Specs

Section:
RF Diode
Types of Diode:
Silicon Bypass Diode
Technology:
Silicon
Forward Voltage:
0.8 V
Reverse Current:
1 uA
Applications:
LEO, MEO, GEO
Space Standard:
ESCC-5000
Dimensions:
10.9 x 10.9 mm
more info
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Description:1.0 to 1.2 V Schottky Barrier Diode

Product Specs

Section:
Power Diode
Types of Diode:
Schottky Barrier Diode
Configuration of Diode:
Dual Diode
Forward Current:
15 A
Forward Voltage:
1.0 to 1.2 V
Reverse Current:
10 uA
Repetitive Peak Reverse Voltage:
200 V
Non-Repetitive Peak Forward Current:
150 A
Recovery Time:
35 ns
Temperature operating range:
-65 to 175 Degree C
RoHS Compliant:
Yes
Package:
TO-254
more info
Description:Small Signal Zener Diode for Voltage Stabilization

Product Specs

Section:
RF Diode
Types of Diode:
Zener Diode
Forward Voltage:
1.1 V
Reverse Current:
0.1 uA
Reverse Voltage:
21 V
RoHS Compliant:
Yes
Applications:
Voltage stabilization
more info
Description:Silicon Beam-lead Schottky Diode

Product Specs

Section:
RF Diode
Types of Diode:
Schottky Diode
Forward Voltage:
375 to 550 mV
Temperature operating range:
-65 to 175 Degree C
Applications:
Microwave integrated circuits, Mixers, Detectors
more info
Description:1500 W Bipolar TVS Diode

Product Specs

Section:
Power Diode
Types of Diode:
TVS Diode
Forward Current:
100 uA
Reverse Voltage:
6.2 V
Temperature operating range:
-65 to 175 Degree C
Applications:
Rocket, Satellite, Missiles
Space Standard:
MIL-PRF-19500
more info
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Description:ESD Protection Diode for Data Lines

Product Specs

Section:
Power Diode
Types of Diode:
Protection Diode
Configuration of Diode:
Single Diode
Technology:
Silicon
Forward Current:
2 A
Forward Voltage:
2.5 V
Reverse Current:
100 nA
Reverse Voltage:
300 mV
Temperature operating range:
-40 to 125 degree C
RoHS Compliant:
Yes
Applications:
PCI Express 6.0, Thunderbolt 4 or 3, USB 3.2 Gen 2, USB 3.2 Gen 2x2, USB 3.x, USB4(TM)
more info
Description:40 A, 200 V Schottky Rectifier

Product Specs

Section:
RF Diode
Types of Diode:
Schottky Diode
Repetitive Peak Reverse Voltage:
11 V
Temperature operating range:
-65 to 200 Degree C
more info
Description:Rectifier and Fast Recovery Diode from 1.3 to 3.3 A

Product Specs

Section:
Power Diode
Types of Diode:
Rectifier Diode, Fast Recovery Diode
Forward Current:
1.3 to 3.3 A
Forward Voltage:
0.875 V
Reverse Current:
1 to 50 uA
Reverse Voltage:
100 V
Repetitive Peak Reverse Voltage:
100 V
Non-Repetitive Peak Forward Current:
35 A (surge)
Recovery Time:
25 nS
Temperature operating range:
-65 to 175 Degree C
more info
Description:1200 V Ultra-Fast Discrete Diode for High Frequency Applications

Product Specs

Section:
Power Diode
Types of Diode:
Fast Recovery Diode
Configuration of Diode:
Single Diode
Forward Current:
11 A
Forward Voltage:
2.7 to 4.0 V
Reverse Current:
10 uA
Reverse Voltage:
1200 V
Repetitive Peak Reverse Voltage:
1200 V
Non-Repetitive Peak Forward Current:
190 A
Recovery Time:
80 to 195 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Applications:
Reduced RFI and EMI, Reduced Snubbing, Extensive Characterization of Recovery Parameters, Hermetic
Space Standard:
MIL-PRF-19500
Package:
SMD-1
more info
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Description:Radiation Hardened 45 V Schottky Rectifier

Product Specs

Section:
Power Diode
Types of Diode:
Schottky Barrier Diode
Configuration of Diode:
Dual Diode
Forward Current:
20 to 40 A
Forward Voltage:
0.36 to 0.82 V
Reverse Current:
4.0 to 25 uA
Repetitive Peak Reverse Voltage:
45 V
Non-Repetitive Peak Forward Current:
200 A
Temperature operating range:
-65 to 175 Degree C
Qualification:
ESCC
RoHS Compliant:
Yes
Space Standard:
ESCC-5106/024, ESCC-5000
Package:
TO-254AA
more info
Description:A 30 Volt, 16 Amp, Schottky Diode

Product Specs

Section:
RF Diode
Types of Diode:
Schottky Diode
Forward Current:
16 A
Reverse Current:
2.0 to 100 mA
Temperature operating range:
-65 to 150 Degree C
Applications:
Switching Power Supply, Converters, Free-Wheeling Diodes, Polarity Protection Diode
Space Standard:
MIL-PRF-19500
more info
Description:Tuning Varactor Diode

Product Specs

Section:
RF Diode
Types of Diode:
Varactor Diode
Temperature operating range:
-65 to 150 Degree C
Applications:
Designed for use in solid state electronic tuning of transistor, Gunn and IMPATT oscillators. They may also be used in tunable flters, phase shifters ...
more info
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What are Space-Qualified Diodes?

Diodes are fundamental semiconductor devices that allow current to flow primarily in one direction by utilizing a p-n junction. When forward biased, the junction permits charge carrier movement across the depletion region, enabling conduction. Under reverse bias, the depletion region widens, restricting current flow except for a minimal leakage component. This unidirectional behavior is governed by semiconductor material properties and junction design, making diodes essential for rectification, signal modulation and protection functions in electronic circuits.

In RF, power, and space-grade systems, diodes are used for switching, detection, voltage regulation and transient suppression. Their performance depends on doping profiles, junction capacitance and carrier recombination dynamics, which influence switching speed, power handling, and leakage characteristics. Careful selection of diode specifications ensures reliable operation under varying electrical stresses, thermal conditions and high-frequency environments.

Key Specifications of Space-Qualified Diodes:

  • Types of Diode: Defines the specific diode architecture, such as rectifier, Schottky, Zener, PIN, or fast-recovery types. Each type is optimized for particular electrical behaviors, including switching speed, voltage regulation, or RF performance and directly impacts circuit functionality and application suitability.
  • Forward Current: Represents the maximum continuous current the diode can conduct in the forward-biased condition. This parameter is critical for determining load-handling capability, thermal performance and long-term reliability under operating conditions.
  • Repetitive Peak Reverse Voltage: Specifies the maximum reverse voltage that the diode can withstand repeatedly without breakdown. It is essential for ensuring safe operation in circuits with recurring voltage transients or alternating conditions.
  • Reverse Voltage: Indicates the maximum reverse bias voltage the diode can tolerate under non-repetitive or steady-state conditions. Exceeding this limit can lead to junction breakdown and device failure, making it a key selection factor for voltage margining.
  • Reverse Current: Refers to the leakage current that flows when the diode is reverse biased. Lower reverse current is desirable for minimizing power loss and maintaining signal integrity, particularly in high-sensitivity or low-power applications.
  • Recovery Time: Describes the time required for the diode to transition from conducting to non-conducting state when switching from forward to reverse bias. Faster recovery times are critical in high-frequency and switching applications to reduce losses and prevent signal distortion.

The Largest Database of Diodes

SatNow has listed Diodes from the leading manufacturers and made them searchable by specification. You can enter the key parameters and the search tool will scan catalogs from the leading manufacturers to identify products that meet your spec. Once you find Diodes that meet your requirement, you can view product information, download datasheets or request quotations. Quotation requests will be routed to the manufacturer of the product who will get back to you directly. The quotation will also be routed to distributors of the product in your region.

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