Space Qualified RF Transistors

167 Space Qualified RF Transistors for Space Applications from 8 manufacturers listed on SatNow

Space Qualified RF Transistors are active semiconductor devices designed to amplify or switch high-frequency signals in RF and microwave systems operating in space environments. These transistors function by controlling charge carrier flow through a semiconductor structure, enabling signal gain, power amplification, or oscillation depending on circuit configuration. Space Qualified RF Transistors from the leading manufacturers are listed below. Use the filters to narrow down on products based on your requirement. Download Datasheets, Compare products and Request Quotations. Your Inquiry will be directed to the manufacturer and their distributors who will get back to you with a quote.

167 Space Qualified RF Transistors from 8 Manufacturers
167 Products from 8 Manufacturers
Page 1 of 11
Description:Low Noise Matched Dual NPN Transistor

Product Specs

Transistor Type:
Dual Monolithic
Space Standard:
MIL-PRF-38535
Technology:
NPN
CW/Pulse:
CW
more info
Description:P-Channel Field Effect Transistor from -0.015A to -0.6A

Product Specs

Transistor Type:
FET
Space Standard:
MIL-PRF-19500
Technology:
Si
CW/Pulse:
CW
Supply Voltage:
30 V
Package:
UB
more info
Description:High Power PNP Transistors

Product Specs

Space Standard:
ESCC-5204/002
Technology:
PNP
CW/Pulse:
Pulse
more info
Description:HiRel NPN Silicon RF Transistor from 6.5 to 8 GHz

Product Specs

Transistor Type:
BJT
Space Standard:
ESCC-5611/006, ESCC-5010
Technology:
Si, NPN
CW/Pulse:
CW
Frequency:
6.5 to 8 GHz
Gain:
10 to 11 dB(Transducer Gain)
Supply Voltage:
1 V(Base-Emitter forward voltage)
more info
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Description:60 V Radiation Hardened Space Qualified RF Transistor

Product Specs

Transistor Type:
BJT
Space Standard:
ESCC-5207/005
Technology:
NPN
CW/Pulse:
CW, Pulse
Frequency:
80 to 500 MHz
Gain:
60 to 450 dB(DC Current Gain)
Package:
Flat-8
more info
Description:Radiation-Hardened Ceramic Transistor

Product Specs

Transistor Type:
MOSFET, CMOS
Space Standard:
MIL-PRF-38534, MIL-PRF-19500, MIL-STD-202, MIL-STD-883, MIL-STD-750
Technology:
GaAs
CW/Pulse:
CW
Supply Voltage:
0.7 to 1.8 V(Forward Voltage)
Package:
LCC-6
more info
Description:Space Qualified GaAs FETs at 12 GHz

Product Specs

Transistor Type:
FET
Space Standard:
MIL-PRF-38534
Technology:
GaAs
CW/Pulse:
CW
Frequency:
12 GHz
Power:
25.5 dBm
Power(W):
0.35 W
more info
Description:Low Noise Matched Dual NPN Transistor

Product Specs

Transistor Type:
Dual Monolithic
Space Standard:
MIL-PRF-38535
Technology:
PNP
CW/Pulse:
CW
more info
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Description:40V N-Channe Field Effect Transistor

Product Specs

Transistor Type:
FET
Space Standard:
MIL-PRF-19500/431
Technology:
Si
CW/Pulse:
CW
Supply Voltage:
40 V
Package:
TO-18
more info
Description:HiRel NPN Silicon RF Transistor from DC to 40 GHz

Product Specs

Transistor Type:
BJT
Space Standard:
ESCC-5611/010, ESCC-5010
Technology:
Si, NPN
CW/Pulse:
CW
Frequency:
DC to 40 GHz
Power:
16 dBm
Power(W):
0.039 W
Gain:
8 to 19.2 dB(Power Gain)
more info
Description:60 V Bipolar Transistor for Aerospace Applications

Product Specs

Transistor Type:
BJT
Space Standard:
ESCC-5207/009
Technology:
NPN, PNP
CW/Pulse:
CW, Pulse
Gain:
40 to 400 dB(DC Current Gain)
Package:
Flat-8
more info
Description:Space-Grade Ceramic Transistor Optocouplers

Product Specs

Transistor Type:
MOSFET, CMOS
Space Standard:
MIL-PRF-38534, MIL-PRF-19500, MIL-STD-202, MIL-STD-883, MIL-STD-750
Technology:
Si
CW/Pulse:
CW
Supply Voltage:
1.1 to 1.8 V (Forward Voltage)
Package:
4-pin
more info
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Description:26 GHz Super Low Noise pHEMT Device

Product Specs

Transistor Type:
pHEMT
Space Standard:
MIL-PRF-38534
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Package:
Chip
more info
Description:N-Channel Field Effect Transistor from 30 to 40V

Product Specs

Transistor Type:
FET
Space Standard:
MIL-PRF-19500/385
Technology:
Si
CW/Pulse:
CW
Supply Voltage:
30 V
Package:
UB
more info
Description:HiRel NPN Silicon RF Transistor from DC to 42 GHz

Product Specs

Transistor Type:
BJT
Space Standard:
ESCC-5611/011, ESCC-5010
Technology:
Si, NPN
CW/Pulse:
CW
Frequency:
DC to 42 GHz
Gain:
18.3 to 26.5 dB(Power Gain)
more info
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What are Space Qualified RF Transistors?

Space Qualified RF Transistors are active semiconductor devices designed to amplify or switch high-frequency signals in RF and microwave systems operating in space environments. These transistors function by controlling charge carrier flow through a semiconductor structure, enabling signal gain, power amplification, or oscillation depending on circuit configuration. Their internal architecture, including junction design, channel structure, and material composition, determines key performance attributes such as frequency response, gain linearity, and power handling capability across the intended operational band.

For space applications, RF transistors must maintain stable electrical characteristics under radiation exposure, thermal cycling, vacuum conditions, and mechanical stress. Device selection therefore involves careful consideration of semiconductor technology, substrate properties, and packaging to ensure consistent performance and reliability. Parameters such as gain stability, supply requirements, pulse handling capability, and thermal dissipation are critical, as they directly influence amplifier efficiency, signal integrity, and long-term mission durability in demanding RF subsystems.

Key specifications of space qualified rf transistor:

  • Transistor type: Transistor type defines the fundamental device structure and mode of operation, such as field-effect or bipolar configurations. It is important because it determines carrier transport mechanisms, input impedance characteristics, switching behavior, and suitability for specific RF functions including amplification or signal control.
  • Technology: Technology refers to the semiconductor process and material system used to fabricate the transistor. It influences frequency capability, power efficiency, radiation tolerance, and thermal performance. The chosen technology affects how the device performs under high-frequency operation and environmental stress typical of space systems.
  • Substrate: Substrate indicates the base material on which the semiconductor device is constructed. It is significant because substrate properties affect thermal conductivity, electrical isolation, mechanical stability, and radiation response. Substrate selection directly impacts heat dissipation and overall device reliability in space environments.
  • Frequency: Frequency defines the operational range over which the transistor can provide effective gain or switching performance. It is a key selection parameter because device geometry, parasitic capacitances, and transit times determine how efficiently the transistor operates at RF and microwave frequencies.
  • Gain: Gain represents the amplification capability of the transistor, indicating how much the input signal is increased at the output. It is critical for ensuring sufficient signal strength in RF chains, and its stability across frequency and environmental conditions affects overall system performance and linearity.
  • Power (dBm): Power specifies the output or handling capability of the transistor in logarithmic units relative to a reference level. It is important because it defines how much RF energy the device can deliver or sustain without distortion or degradation, influencing amplifier design and system power budgets.
  • Supply Voltage: Supply Voltage defines the electrical bias required for proper transistor operation. It is a critical parameter because it determines operating point, efficiency, and compatibility with spacecraft power systems. Voltage stability influences gain, linearity, and safe operating conditions.
  • Pulse: Pulse refers to the transistor’s capability to operate under pulsed signal conditions. It is significant in applications where signals are not continuous, as pulsed operation introduces transient thermal and electrical stresses. Pulse handling capability affects reliability and performance consistency during non-steady-state operation.
  • Package Type: Package Type defines the physical enclosure and interface of the transistor. It is important because it affects thermal dissipation, electrical parasitics, mechanical robustness, and integration into RF assemblies. Package design plays a key role in ensuring stable performance, effective heat transfer, and survivability in space-qualified hardware.

The Largest Database of Space Qualified RF Transistors

SatNow has listed Space Qualified RF Transistors from the leading manufacturers and made them searchable by specification. You can enter the key parameters and the search tool will scan catalogs from the leading manufacturers to identify products that meet your spec. Once you find Space Qualified RF Transistors that meet your requirement, you can view product information, download datasheets or request quotations. Quotation requests will be routed to the manufacturer of the product who will get back to you directly. The quotation will also be routed to distributors of the product in your region.

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