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GaN Power Transistors for Space Applications

37 GaN Power Transistors for Space Applications from 5 manufacturers listed on SatNow
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GaN Power Transistors for space applications from multiple manufacturers are listed on SATNow. Use the filters to select products based on your requirement. View product details, download datasheets, compare products, get quotes and pricing for matching products. SATNow has compiled this list of products specifically for Space and Satellite Applications.

FBG04N08A Image
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EPC Space - FBG04N08A

GaN Power Transistor from EPC Space
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Description:40 V Radiation Hardened GaN Transistor
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
24 to 28 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
32 A
Total Charge:
2.2 to 2.8 nC
Input Capacitance:
283 to 312 pF
Output Capacitance:
170 to 270 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
3.42 x 3.42 mm
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ISL70020SEH Image
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Renesas - ISL70020SEH

GaN Power Transistor from Renesas
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Description:65 A Enhancement Mode GaN Power Transistor for Commercial Aerospace Applications
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 8 milli-ohm
Continous Drain Current:
65 A
Total Charge:
19 to 25 nC
Input Capacitance:
1920 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickness: 685µm (26.97 mils)
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Efficient Power Conversion - EPC7020

GaN Power Transistor from Efficient Power Conversion
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Description:200V, 170 A Rad Hard Enhancement Mode GaN Transistor
Segment:
Satellite
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
8 to 11 mOhms
Continous Drain Current:
39 A
Pulsed Drain Current:
170 A
Total Charge:
11.7 nC
Input Capacitance:
1137 pF
Output Capacitance:
494 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Die
Dimensions:
4.6 x 2.6 mm
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Teledyne Defense Electronics - TDG650E15BEP

GaN Power Transistor from Teledyne Defense Electronics
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Description:650V Bottom Side Cooled E-Mode GaN FET
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
100 to 258 mOhms
Continous Drain Current:
12.5 to 15 A
Pulsed Drain Current:
30 A
Total Charge:
3.3 nC
Input Capacitance:
120 pF
Output Capacitance:
31 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
5 x 6.6 x 0.51 mm
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Teledyne Defense Electronics - TDG650E15BEP

GaN Power Transistor from Teledyne Defense Electronics
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Description:650V Bottom Side Cooled E-Mode GaN FET
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
100 to 258 mOhms
Continous Drain Current:
12.5 to 15 A
Pulsed Drain Current:
30 A
Total Charge:
3.3 nC
Input Capacitance:
120 pF
Output Capacitance:
31 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
5 x 6.6 x 0.51 mm
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CHK8201-SYA Image
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United Monolithic Semiconductors - CHK8201-SYA

GaN Power Transistor from United Monolithic Semiconductors
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Description:45W GaN HEMT Microwave Transistor
Gate Threshold Voltage:
-1.9 V (Source)
Drain Source Voltage:
50 V
Continous Drain Current:
1.8 A
Temperature operating range:
-40 to 85 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
more info
FBG04N30B Image
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EPC Space - FBG04N30B

GaN Power Transistor from EPC Space
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Description:Radiation Hardened eGaN HEMT for Satellites and Deep Space Probes
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
5 to 8.5 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
120 A
Total Charge:
8.9 to 11.4 nC
Input Capacitance:
1100 to 1300 pF
Output Capacitance:
650 to 900 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
5.7 x 3.9 mm
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ISL73024SEH Image
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Renesas - ISL73024SEH

GaN Power Transistor from Renesas
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Description:200 V N-channel Enhancement Mode GaN Power Transistor
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
45 to 110 milli-ohm
Continous Drain Current:
7.5 A
Total Charge:
2.5 to 5 nC
Input Capacitance:
270 pF
Output Capacitance:
150 to 200 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
2766µm x 950µm (108.90 mils x 37.40 mils) Thickness: 685µm (26.97 mils)
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Efficient Power Conversion - EPC7018

GaN Power Transistor from Efficient Power Conversion
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Description:Rad Hard Enhancement Mode Power Transistor
Segment:
Satellite
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.7 to 3.9 mOhms
Continous Drain Current:
90 A
Pulsed Drain Current:
345 A
Total Charge:
15.2 nC
Input Capacitance:
1828 pF
Output Capacitance:
1025 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Die
Dimensions:
6.05 x 2.3 mm
more info
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Teledyne Defense Electronics - TDG650E30BSP

GaN Power Transistor from Teledyne Defense Electronics
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Description:650V E-Mode Bottom Side Cooled GaN Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 to 150 mOhms
Continous Drain Current:
25 to 30 A
Pulsed Drain Current:
60 A
Total Charge:
6.1 nC
Input Capacitance:
242 pF
Output Capacitance:
65 pF
Turn-on Delay Time:
4.1 to 4.3 nS
Turn-off Delay Time:
8 to 8.2 nS
Rise Time:
3.7 to 4.9 nS
Fall Time:
3.4 to 5.2 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
7.1 x 8.5 x 0.56 mm
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