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Space Qualified MOSFETs - Page 27

317 Space Qualified MOSFETs from 6 Manufacturers meet your specification.
IRHNA9064 Image
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Infineon Technologies - IRHNA9064

Space Qualified MOSFETs from Infineon Technologies
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Description:-60 V, 300 nC, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-48 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
48 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-2
more info
IRHLMS77064 Image
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Infineon Technologies - IRHLMS77064

Space Qualified MOSFETs from Infineon Technologies
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Description:60 V, 162 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
12 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHLNJ797034 Image
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Infineon Technologies - IRHLNJ797034

Space Qualified MOSFETs from Infineon Technologies
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Description:Single P-channel Rad hard MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-22 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
72 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
57 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
more info
IRHLUBC770Z4 Image
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Infineon Technologies - IRHLUBC770Z4

Space Qualified MOSFETs from Infineon Technologies
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Description:60 V Radiation Hardened N-CShannel MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.8 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
680 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
UBC
more info
IRHF9130 Image
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Infineon Technologies - IRHF9130

Space Qualified MOSFETs from Infineon Technologies
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Description:100 V Rad-Hard P-Channel Power MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.5 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
350 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
more info
IRHF9230 Image
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Infineon Technologies - IRHF9230

Space Qualified MOSFETs from Infineon Technologies
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Description:-200 V, 45 nC, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
920 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205AF
more info
IRHM7260SE Image
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Infineon Technologies - IRHM7260SE

Space Qualified MOSFETs from Infineon Technologies
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Description:200 V, 260 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
77 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM7360SE Image
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Infineon Technologies - IRHM7360SE

Space Qualified MOSFETs from Infineon Technologies
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Description:400 V, 185 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
22 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
210 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM7450 Image
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Infineon Technologies - IRHM7450

Space Qualified MOSFETs from Infineon Technologies
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Description:500 V, 150 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
500 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM7450SE Image
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Infineon Technologies - IRHM7450SE

Space Qualified MOSFETs from Infineon Technologies
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Description:500 V, 140 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
570 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
151 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
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