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Space Qualified MOSFETs - Page 21

317 Space Qualified MOSFETs from 6 Manufacturers meet your specification.
IRHNS9A7160 Image
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Infineon Technologies - IRHNS9A7160

Space Qualified MOSFETs from Infineon Technologies
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Description:100 V, 195 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
6.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SupIR-SMD
more info
IRHM9230 Image
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Infineon Technologies - IRHM9230

Space Qualified MOSFETs from Infineon Technologies
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Description:-200 V, 35 nC, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.5 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
920 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHM9250 Image
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Infineon Technologies - IRHM9250

Space Qualified MOSFETs from Infineon Technologies
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Description:-200 V, 200 nC, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-14 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
330 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
IRHY67C30CM Image
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Infineon Technologies - IRHY67C30CM

Space Qualified MOSFETs from Infineon Technologies
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Description:600 V, 52 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
3100 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
IRHY7130CM Image
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Infineon Technologies - IRHY7130CM

Space Qualified MOSFETs from Infineon Technologies
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Description:100 V, 40 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14.4 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
IRHY7230CM Image
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Infineon Technologies - IRHY7230CM

Space Qualified MOSFETs from Infineon Technologies
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Description:200 V, 50 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.4 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
490 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
IRHLNM7S7214 Image
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Infineon Technologies - IRHLNM7S7214

Space Qualified MOSFETs from Infineon Technologies
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Description:250 V, 13 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.2 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
1100 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
23.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.2
more info
IRHLUB770Z4 Image
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Infineon Technologies - IRHLUB770Z4

Space Qualified MOSFETs from Infineon Technologies
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Description:60 V, 3.6 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.8 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
680 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
UB
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IRHLUB7970Z4 Image
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Infineon Technologies - IRHLUB7970Z4

Space Qualified MOSFETs from Infineon Technologies
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Description:Radiation Hardened Power MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.53 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
1400 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.57 W
Temperature operating range:
-55 to 150 Degree C
Package:
UB
more info
IRHM57260SE Image
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Infineon Technologies - IRHM57260SE

Space Qualified MOSFETs from Infineon Technologies
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Description:200 V, 165 nC, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
49 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
more info
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