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GaN Power Transistors for Space Applications - Page 5

48 GaN Power Transistors from 5 Manufacturers meet your specification.
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Teledyne Defense Electronics - TDG650E30BSP

GaN Power Transistor from Teledyne Defense Electronics
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Description:650V E-Mode Bottom Side Cooled GaN Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 to 150 mOhms
Continous Drain Current:
25 to 30 A
Pulsed Drain Current:
60 A
Total Charge:
6.1 nC
Input Capacitance:
242 pF
Output Capacitance:
65 pF
Turn-on Delay Time:
4.1 to 4.3 nS
Turn-off Delay Time:
8 to 8.2 nS
Rise Time:
3.7 to 4.9 nS
Fall Time:
3.4 to 5.2 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
7.1 x 8.5 x 0.56 mm
more info
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Teledyne Defense Electronics - TDG100E90BEP

GaN Power Transistor from Teledyne Defense Electronics
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Description:Bottom Side Cooled, 100V E-Mode GaN Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 mOhms
Continous Drain Current:
65 to 90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
7.6 x 4.6 x 0.5 mm
more info
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Teledyne Defense Electronics - TDG100E90TEP

GaN Power Transistor from Teledyne Defense Electronics
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Description:Top Side Cooled, 100 V E-Mode GaN Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 mOhms
Continous Drain Current:
65 to 90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
7 x 4 x 0.54 mm
more info
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Teledyne Defense Electronics - TDG100E90BSP

GaN Power Transistor from Teledyne Defense Electronics
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Description:100V, E-Mode Bottom Side Cooled GaN Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 mOhms
Continous Drain Current:
65 to 90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
7.6 x 4.6 x 0.5 mm
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Teledyne Defense Electronics - TDG100E90TSP

GaN Power Transistor from Teledyne Defense Electronics
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Description:100V, Top Side Cooled E-Mode GaN Transistor
Segment:
Ground
Drain Source Voltage:
100 V
Drain Source Resistance:
7 mOhms
Continous Drain Current:
90 A
Package Type:
Surface Mount
Dimensions:
7 x 4 x 0.54 mm
more info
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Teledyne Defense Electronics - TDG650E60BEP

GaN Power Transistor from Teledyne Defense Electronics
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Description:650V, E-Mode Bottom Side Cooled GaN Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
11 to 60 mOhms
Continous Drain Current:
47 to 60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 nS
Turn-off Delay Time:
14.9 nS
Rise Time:
12.4 nS
Fall Time:
22 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
11 x 9 x 0.54 mm
more info
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Teledyne Defense Electronics - TDG650E60TEP

GaN Power Transistor from Teledyne Defense Electronics
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Description:650V Top Side Cooled E-Mode GaN Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
11 to 60 mOhms
Continous Drain Current:
47 to 60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 nS
Turn-off Delay Time:
14.9 nS
Rise Time:
12.4 nS
Fall Time:
22 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
9 x 7.6 x 0.54 mm
more info
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Teledyne Defense Electronics - TDG650E601TSP

GaN Power Transistor from Teledyne Defense Electronics
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Description:Space GaN E-Mode Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
25 to 65 mOhms
Continous Drain Current:
41 to 60 A
Pulsed Drain Current:
120 A
Total Charge:
14 nC
Input Capacitance:
516 pF
Output Capacitance:
127 pF
Turn-on Delay Time:
8.1 nS
Turn-off Delay Time:
9.8 nS
Rise Time:
8.5 nS
Fall Time:
7.7 nS
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
9 x 7.6 x 0.54 mm
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