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GaN Power Transistors for Space Applications - Page 4

48 GaN Power Transistors from 5 Manufacturers meet your specification.
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Teledyne Defense Electronics - TDG100E90TEP

GaN Power Transistor from Teledyne Defense Electronics
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Description:Top Side Cooled, 100 V E-Mode GaN Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 mOhms
Continous Drain Current:
65 to 90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
7 x 4 x 0.54 mm
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EPC7014 Image
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Efficient Power Conversion - EPC7014

GaN Power Transistor from Efficient Power Conversion
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Description:60 V Rad Hard GaN Power Transistor for Deep Space Probes
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 to 72 V
Drain Source Resistance:
240 to 340 milli-ohm
Continous Drain Current:
2.4 A
Pulsed Drain Current:
4 A
Total Charge:
142 to 184 nC
Input Capacitance:
16 to 22 pF
Output Capacitance:
17 to 26 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
BGA
Dimensions:
0.9 x 0.9 mm
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FBG30N04C Image
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EPC Space - FBG30N04C

GaN Power Transistor from EPC Space
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Description:Rad Hard eGaN HEMT for Commercial Satellite EPS & Avionics Applications
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.8 V
Drain Source Voltage:
300 V
Drain Source Resistance:
210 to 400 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
12 A
Total Charge:
1.6 to 2.6 nC
Input Capacitance:
380 to 450 pF
Output Capacitance:
48 to 60 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
4.4 x 4.4 mm
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Teledyne Defense Electronics - TDG100E90TSP

GaN Power Transistor from Teledyne Defense Electronics
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Description:100V, Top Side Cooled E-Mode GaN Transistor
Segment:
Ground
Drain Source Voltage:
100 V
Drain Source Resistance:
7 mOhms
Continous Drain Current:
90 A
Package Type:
Surface Mount
Dimensions:
7 x 4 x 0.54 mm
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EPC7019 Image
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Efficient Power Conversion - EPC7019

GaN Power Transistor from Efficient Power Conversion
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Description:Rad Hard GaN Power Transistor for Deep Space Applications
Segment:
Satellite
Gate Threshold Voltage:
800 to 2500 mV
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 1.5 milli-ohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 degree C
Package Type:
Die
Dimensions:
6.05 x 2.3 mm
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Teledyne Defense Electronics - TDG650E60BEP

GaN Power Transistor from Teledyne Defense Electronics
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Description:650V, E-Mode Bottom Side Cooled GaN Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
11 to 60 mOhms
Continous Drain Current:
47 to 60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 nS
Turn-off Delay Time:
14.9 nS
Rise Time:
12.4 nS
Fall Time:
22 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
11 x 9 x 0.54 mm
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Teledyne Defense Electronics - TDG100E90BSP

GaN Power Transistor from Teledyne Defense Electronics
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Description:100V, E-Mode Bottom Side Cooled GaN Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 mOhms
Continous Drain Current:
65 to 90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
7.6 x 4.6 x 0.5 mm
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Teledyne Defense Electronics - TDG650E602TSP

GaN Power Transistor from Teledyne Defense Electronics
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Description:650V Space GaN E-Mode Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
11 to 60 mOhms
Continous Drain Current:
47 to 60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 nS
Turn-off Delay Time:
14.9 nS
Rise Time:
12.4 nS
Fall Time:
22 nS
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
9 x 7.6 x 0.54 mm
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Teledyne Defense Electronics - TDG650E30BEP

GaN Power Transistor from Teledyne Defense Electronics
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Description:650V E-Mode GaN Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
53 to 150 mOhms
Continous Drain Current:
25 to 30 A
Pulsed Drain Current:
60 A
Total Charge:
6.1 nC
Input Capacitance:
242 pF
Output Capacitance:
65 pF
Turn-on Delay Time:
4.1 to 4.3 nS
Turn-off Delay Time:
8 to 8.2 nS
Rise Time:
3.7 to 4.9 nS
Fall Time:
3.4 to 5.2 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
7.1 x 8.5 x 0.56 mm
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Teledyne Defense Electronics - TDG650E15BEP

GaN Power Transistor from Teledyne Defense Electronics
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Description:650V Bottom Side Cooled E-Mode GaN FET
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
100 to 258 mOhms
Continous Drain Current:
12.5 to 15 A
Pulsed Drain Current:
30 A
Total Charge:
3.3 nC
Input Capacitance:
120 pF
Output Capacitance:
31 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
5 x 6.6 x 0.51 mm
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