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GaN Power Transistors for Space Applications - Page 2

48 GaN Power Transistors from 5 Manufacturers meet your specification.
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Renesas - SL70024SEH

GaN Power Transistor from Renesas
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Description:200V, 7.5A Enhancement Mode GaN Power Transistor
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
45 to 110 milli-ohm
Continous Drain Current:
7.5 A
Total Charge:
2.5 to 5 nC
Input Capacitance:
270 pF
Output Capacitance:
150 to 200 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
2766µm x 950µm (108.90 mils x 37.40 mils) Thickness: 685µm (26.97 mils)
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Efficient Power Conversion - EPC7007

GaN Power Transistor from Efficient Power Conversion
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Description:200V Rad Hard Enhancement Mode Power Transistor
Segment:
Satellite
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
17 to 25 mOhms
Continous Drain Current:
20 A
Pulsed Drain Current:
80 A
Total Charge:
5.4 nC
Input Capacitance:
525 pF
Output Capacitance:
256 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Die
Dimensions:
3.6 x 1.6 mm
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EPC7019G Image
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EPC Space - EPC7019G

GaN Power Transistor from EPC Space
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Description:40 V eGaN HEMT for Commercial Satellite Applications
Segment:
Satellite
Configuration:
Dual
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.7 milliohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
8.0 x 5.6 mm
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Teledyne Defense Electronics - TDG650E60TEP

GaN Power Transistor from Teledyne Defense Electronics
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Description:650V Top Side Cooled E-Mode GaN Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
11 to 60 mOhms
Continous Drain Current:
47 to 60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 nS
Turn-off Delay Time:
14.9 nS
Rise Time:
12.4 nS
Fall Time:
22 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
9 x 7.6 x 0.54 mm
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ISL73023SEH Image
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Renesas - ISL73023SEH

GaN Power Transistor from Renesas
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Description:100V, 60A Enhancement Mode GaN Power Transistor
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.7 to 3 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 to 12 milli-ohm
Continous Drain Current:
60 A
Total Charge:
14 to 25 nC
Input Capacitance:
1500 pF
Output Capacitance:
960 to 1250 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickness: 685µm (26.97 mils)
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Efficient Power Conversion - EPC7004

GaN Power Transistor from Efficient Power Conversion
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Description:100V Rad Hard Enhancement Mode Power Transistor
Segment:
Satellite
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 to 7 mOhms
Continous Drain Current:
60 A
Pulsed Drain Current:
160 A
Total Charge:
6.4 nC
Input Capacitance:
817 pF
Output Capacitance:
485 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Die
Dimensions:
4.1 x 1.6 mm
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EPC7014UB Image
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EPC Space - EPC7014UB

GaN Power Transistor from EPC Space
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Description:Rad Hard e-GaN HEMT for Commercial Satellite Space Environments
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
340 to 580 milli-ohm
Continous Drain Current:
1 A
Pulsed Drain Current:
4 A
Total Charge:
0.142 to 0.184 nC
Input Capacitance:
16 to 22 pF
Output Capacitance:
0.1 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
3.25 x 2.74 mm
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Teledyne Defense Electronics - TDG650E601TSP

GaN Power Transistor from Teledyne Defense Electronics
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Description:Space GaN E-Mode Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
25 to 65 mOhms
Continous Drain Current:
41 to 60 A
Pulsed Drain Current:
120 A
Total Charge:
14 nC
Input Capacitance:
516 pF
Output Capacitance:
127 pF
Turn-on Delay Time:
8.1 nS
Turn-off Delay Time:
9.8 nS
Rise Time:
8.5 nS
Fall Time:
7.7 nS
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
9 x 7.6 x 0.54 mm
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ISL70023SEH Image
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Renesas - ISL70023SEH

GaN Power Transistor from Renesas
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Description:100 V Enhancement Mode GaN Power Transistor
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.7 to 3 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 to 12 milli-ohm
Continous Drain Current:
60 A
Total Charge:
14 to 25 nC
Input Capacitance:
1500 pF
Output Capacitance:
960 to 1250 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickness: 685µm (26.97 mils)
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Efficient Power Conversion - EPC7003

GaN Power Transistor from Efficient Power Conversion
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Description:100V, 42 A Rad Hard Enhancement Mode GaN Transistor
Segment:
Satellite
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
18 to 30 mOhms
Continous Drain Current:
10 A
Pulsed Drain Current:
42 A
Total Charge:
1.8 to 2.5 nC
Input Capacitance:
230 to 313 pF
Output Capacitance:
119 to 143 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Die
Dimensions:
1.7 x 1.1 mm
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