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GaN Power Transistors for Space Applications - Page 3

48 GaN Power Transistors from 5 Manufacturers meet your specification.
FBG10N05A Image
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EPC Space - FBG10N05A

GaN Power Transistor from EPC Space
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Description:100 V Radiation Hardened eGaN HEMT
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
36 to 45 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
20 A
Total Charge:
1.7 to 2.2 nC
Input Capacitance:
207 to 233 pF
Output Capacitance:
133 to 170 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
3.4 x 3.4 mm
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Teledyne Defense Electronics - TDG650E602TSP

GaN Power Transistor from Teledyne Defense Electronics
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Description:650V Space GaN E-Mode Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
11 to 60 mOhms
Continous Drain Current:
47 to 60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 nS
Turn-off Delay Time:
14.9 nS
Rise Time:
12.4 nS
Fall Time:
22 nS
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
9 x 7.6 x 0.54 mm
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ISL73020SEH Image
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Renesas - ISL73020SEH

GaN Power Transistor from Renesas
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Description:40 V Enhancement Mode GaN Power Transistor
Segment:
Ground
Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 8 milli-ohm
Continous Drain Current:
65 A
Total Charge:
19 to 25 nC
Input Capacitance:
1920 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickness: 685µm (26.97 mils)
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Efficient Power Conversion - EPC7001

GaN Power Transistor from Efficient Power Conversion
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Description:40V, 250 A Rad Hard Enhancement Mode GaN Transistor
Segment:
Satellite
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
2.1 to 4 mOhms
Continous Drain Current:
60 A
Pulsed Drain Current:
250 A
Total Charge:
11 nC
Input Capacitance:
1342 pF
Output Capacitance:
792 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Die
Dimensions:
4.1 x 1.6 mm
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FBG10N30B Image
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EPC Space - FBG10N30B

GaN Power Transistor from EPC Space
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Description:Radiation Hardened 100 V eGaN Transistor
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
8 to 12 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
120 A
Total Charge:
8.3 to 11 nC
Input Capacitance:
850 to 1000 pF
Output Capacitance:
500 to 700 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
5.715 x 3.937 mm
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Teledyne Defense Electronics - TDG650E30BEP

GaN Power Transistor from Teledyne Defense Electronics
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Description:650V E-Mode GaN Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
53 to 150 mOhms
Continous Drain Current:
25 to 30 A
Pulsed Drain Current:
60 A
Total Charge:
6.1 nC
Input Capacitance:
242 pF
Output Capacitance:
65 pF
Turn-on Delay Time:
4.1 to 4.3 nS
Turn-off Delay Time:
8 to 8.2 nS
Rise Time:
3.7 to 4.9 nS
Fall Time:
3.4 to 5.2 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
7.1 x 8.5 x 0.56 mm
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FBG20N18B Image
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EPC Space - FBG20N18B

GaN Power Transistor from EPC Space
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Description:200 V Rad Hard e-GaN HEMT for Satellite and Avionics Applications
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
21 to 28 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
72 A
Total Charge:
5 to 7 nC
Input Capacitance:
637 to 900 pF
Output Capacitance:
300 to 359 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
5.7 x 3.9 mm
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Teledyne Defense Electronics - TDG100E90BEP

GaN Power Transistor from Teledyne Defense Electronics
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Description:Bottom Side Cooled, 100V E-Mode GaN Transistor
Segment:
Ground
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 mOhms
Continous Drain Current:
65 to 90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Dimensions:
7.6 x 4.6 x 0.5 mm
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Efficient Power Conversion - EPC7002

GaN Power Transistor from Efficient Power Conversion
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Description:40V, 62 A Rad Hard Enhancement Mode GaN Transistor
Segment:
Satellite
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
8.5 to 14.5 mOhms
Continous Drain Current:
10 A
Pulsed Drain Current:
62 A
Total Charge:
2.9 nC
Input Capacitance:
349 pF
Output Capacitance:
201 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Die
Dimensions:
1.7 x 1.1 mm
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FBG20N04A Image
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EPC Space - FBG20N04A

GaN Power Transistor from EPC Space
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Description:200 V Radiation Hard GaN HEMT for Deep Space Applications
Segment:
Satellite
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.8 V
Drain Source Voltage:
200 V
Drain Source Resistance:
68 to 130 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
16 A
Total Charge:
1.6 to 3 nC
Input Capacitance:
106 to 150 pF
Output Capacitance:
72 to 90 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Dimensions:
3.4 x 3.4 mm
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