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Space Qualified MOSFETs - Page 4

317 Space Qualified MOSFETs from 6 Manufacturers meet your specification.
IRHG7110 Image
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Infineon Technologies - IRHG7110

Space Qualified MOSFETs from Infineon Technologies
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Description:100 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
1 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
700 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHG9110 Image
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Infineon Technologies - IRHG9110

Space Qualified MOSFETs from Infineon Technologies
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Description:100 V, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Quad
Continous Drain Current:
-0.75 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
1200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHQ567110 Image
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Infineon Technologies - IRHQ567110

Space Qualified MOSFETs from Infineon Technologies
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Description:-100 to 100 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement Mode
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Quad
Continous Drain Current:
-2.8 to 4.6 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
270 to 1200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
more info
IRHQ57110 Image
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Infineon Technologies - IRHQ57110

Space Qualified MOSFETs from Infineon Technologies
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Description:100 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
4.6 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
310 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
more info
IRHQ57214SE Image
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Infineon Technologies - IRHQ57214SE

Space Qualified MOSFETs from Infineon Technologies
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Description:250 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
1.9 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
1800 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
more info
IRHQ597110 Image
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Infineon Technologies - IRHQ597110

Space Qualified MOSFETs from Infineon Technologies
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Description:-100 V, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Quad
Continous Drain Current:
-2.8 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
1200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
more info
IRHQ6110 Image
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Infineon Technologies - IRHQ6110

Space Qualified MOSFETs from Infineon Technologies
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Description:-100 to 100 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement Mode
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Quad
Continous Drain Current:
-2.2 to 3 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
600 to 1100 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
more info
IRHLQ77214 Image
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Infineon Technologies - IRHLQ77214

Space Qualified MOSFETs from Infineon Technologies
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Description:250 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
2.6 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
1000 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
more info
IRHLQ7S7214 Image
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Infineon Technologies - IRHLQ7S7214

Space Qualified MOSFETs from Infineon Technologies
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Description:250 V Radiation Hardened Power MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
2.6 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
1000 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-Pin LCC
more info
IRHLG77110 Image
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Infineon Technologies - IRHLG77110

Space Qualified MOSFETs from Infineon Technologies
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Description:100 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
1.8 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
285 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
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