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Space Qualified MOSFETs - Page 3

317 Space Qualified MOSFETs from 6 Manufacturers meet your specification.
IRHG567110 Image
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Infineon Technologies - IRHG567110

Space Qualified MOSFETs from Infineon Technologies
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Description:100 V Combination 2N-2P Channel Radiation Hardened Power MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement Mode
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Quad
Continous Drain Current:
-0.96 to 1.6 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
290 to 690 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHG57110 Image
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Infineon Technologies - IRHG57110

Space Qualified MOSFETs from Infineon Technologies
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Description:100 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
1.8 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
290 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHG597110 Image
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Infineon Technologies - IRHG597110

Space Qualified MOSFETs from Infineon Technologies
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Description:Radiation Hardened P-Channel Power MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Quad
Continous Drain Current:
-0.96 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
960 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHG6110 Image
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Infineon Technologies - IRHG6110

Space Qualified MOSFETs from Infineon Technologies
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Description:Radiation-Hardened 2N-2P Channel 100 V Power MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement Mode
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Quad
Continous Drain Current:
-0.75 to 1 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
600 to 1200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHLG77214 Image
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Infineon Technologies - IRHLG77214

Space Qualified MOSFETs from Infineon Technologies
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Description:250 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
0.8 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
1100 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHLG7S7110 Image
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Infineon Technologies - IRHLG7S7110

Space Qualified MOSFETs from Infineon Technologies
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Description:100 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
1.8 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
330 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHLG7S7214 Image
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Infineon Technologies - IRHLG7S7214

Space Qualified MOSFETs from Infineon Technologies
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Description:250 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
0.8 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
1100 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
more info
IRHLUC7670Z4 Image
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Infineon Technologies - IRHLUC7670Z4

Space Qualified MOSFETs from Infineon Technologies
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Description:60 V Radiation Hardened Logic Level Power MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement Mode
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.65 to 0.89 A
Drain Source Breakdown Voltage:
-60 to 60 V
Drain Source Resistance:
750 to 1600 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
LCC-6
more info
IRHLUC770Z4 Image
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Infineon Technologies - IRHLUC770Z4

Space Qualified MOSFETs from Infineon Technologies
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Description:Radiation Hardened N-Channel MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.89 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
750 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
LCC-6
more info
IRHLUC7970Z4 Image
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Infineon Technologies - IRHLUC7970Z4

Space Qualified MOSFETs from Infineon Technologies
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Description:-60 V, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.65 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
1600 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
LCC-6
more info
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