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Space Qualified MOSFETs - Page 8

317 Space Qualified MOSFETs from 6 Manufacturers meet your specification.
IRHE7230 Image
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Infineon Technologies - IRHE7230

Space Qualified MOSFETs from Infineon Technologies
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Description:200 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.5 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
360 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
18-pin LCC
more info
IRHE9110 Image
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Infineon Technologies - IRHE9110

Space Qualified MOSFETs from Infineon Technologies
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Description:-100 V, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.3 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
1100 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
15 W
Temperature operating range:
-55 to 150 Degree C
Package:
18-pin LCC
more info
IRHNS67260 Image
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Infineon Technologies - IRHNS67260

Space Qualified MOSFETs from Infineon Technologies
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Description:200 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
28 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SupIR-SMD
more info
IRHYS9A97034CM Image
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Infineon Technologies - IRHYS9A97034CM

Space Qualified MOSFETs from Infineon Technologies
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Description:-60V Radiation Hardened Power MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-30 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
46 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA Low Ohmic
more info
IRHE9230 Image
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Infineon Technologies - IRHE9230

Space Qualified MOSFETs from Infineon Technologies
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Description:Single P-Channel Rad-Hard MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
800 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
18-pin LCC
more info
IRHMS57064 Image
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Infineon Technologies - IRHMS57064

Space Qualified MOSFETs from Infineon Technologies
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Description:60 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
7.6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
more info
IRHMS57163SE Image
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Infineon Technologies - IRHMS57163SE

Space Qualified MOSFETs from Infineon Technologies
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Description:130 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
130 V
Drain Source Resistance:
15.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
more info
IRHMS57264SE Image
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Infineon Technologies - IRHMS57264SE

Space Qualified MOSFETs from Infineon Technologies
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Description:250 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
37 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
61 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
more info
IRHMS57Z60 Image
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Infineon Technologies - IRHMS57Z60

Space Qualified MOSFETs from Infineon Technologies
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Description:30 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
5.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
more info
IRHMS9A7064 Image
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Infineon Technologies - IRHMS9A7064

Space Qualified MOSFETs from Infineon Technologies
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Description:60 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
more info
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