1. Home
  2. Electrical / Electronic Components
  3. Space Qualified MOSFETs
Filters

Space Qualified MOSFETs - Page 16

317 Space Qualified MOSFETs from 6 Manufacturers meet your specification.
IRHMB6S7160 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHMB6S7160

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:100 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
11 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Tabless Low Ohmic
more info
IRHNS597160 Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHNS597160

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:-100 V, P-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-47 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
49 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SupIR-SMD
more info
IRHYB9A7034CM Image
 Download Datasheet  Request Information  Product Details

Infineon Technologies - IRHYB9A7034CM

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:60 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
19 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
 Download Datasheet  Request Information  Product Details

Infineon Technologies - BUY25CS12K-01 (ES)

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:250 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12.4 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
115 to 300 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
 Download Datasheet  Request Information  Product Details

Infineon Technologies - BUY25CS12K-01 (P)

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:250 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12.4 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
115 to 300 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
 Download Datasheet  Request Information  Product Details

Infineon Technologies - BUY25CS12K-11 (ES)

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:250 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12.4 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
115 to 300 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
 Download Datasheet  Request Information  Product Details

Infineon Technologies - BUY25CS12K-11 (P)

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:250 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12.4 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
115 to 300 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
 Download Datasheet  Request Information  Product Details

Infineon Technologies - BUY25CS45B-01 (ES)

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:250 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
47 to 90 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
 Download Datasheet  Request Information  Product Details

Infineon Technologies - BUY25CS45B-01 (P)

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:250 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
47 to 90 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
more info
 Download Datasheet  Request Information  Product Details

Infineon Technologies - BUY25CS54A-01 (ES)

Space Qualified MOSFETs from Infineon Technologies
 Download Datasheet  Request Information
Description:250 V, N-Channel Enhancement Mode MOSFET
Segment:
Satellite
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
54 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
18 to 70 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD2
more info
Have a Custom Requirement?

Filters

Segment

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current (A)

Apply

Drain Source Breakdown Voltage (V)

Apply

Channel Configuration

Drain Source Resistance (milliohm)

Apply

Gate Source Voltage (V)

Apply

Gate Charge (nC)

Apply

Power Dissipation (W)

Apply

RoHS Compliant

Qualification

Package Type

MOSFETs Directory