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12 Watt Discrete Power GaN Transistors from DC to 18 GHz

SKU: TGF2023-2-02

RF Transistor by Qorvo
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The TGF2023-2-02 from Qorvo is a RF Transistor with Frequency DC to 18 GHz, Power 40.1, Saturated Power 40.1 dBm, Duty_Cycle 10%, Gain 10 to 21.7 dB. Tags: Die. More details for TGF2023-2-02 can be seen below.

Product Specifications

Product Details

  • Part Number
    TGF2023-2-02
  • Manufacturer
    Qorvo
  • Description
    12 Watt Discrete Power GaN Transistors from DC to 18 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defense, Military, Space
  • Application Type
    Broadband Wireless
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 18 GHz
  • Power
    40.1
  • CW Power
    34 dBm
  • Saturated Power
    40.1 dBm
  • Pulsed Width
    100 uS
  • Duty_Cycle
    10%
  • Gain
    10 to 21.7 dB
  • Power Added Effeciency
    55 to 66.2%
  • Supply Voltage
    12 to 32 V (Drain)
  • Input Power
    34 dBm
  • Drain Gate Voltage
    100 V
  • Voltage - Gate-Source (Vgs)
    -7 to 2 V
  • Drain Current
    2.5 A
  • Quiescent Drain Current
    50 to 125 mA
  • Gate Leakage Current (Ig)
    -2.5 mA
  • Thermal Resistance
    6.3 to 10.6 Degree C/W
  • Package Type
    Die
  • Dimension
    0.82 x 0.92 x 0.1 mm
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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