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16 GHz High Power GaAs FET

SKU: MwT-8

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MwT-8 Image

The MwT-8 from MicroWave Technology is a RF Transistor with Frequency DC to 12 GHz, P1dB 27 to 28 dBm, OIP3 40 dBm, Small Signal Gain 7 to 7.5 dB, Power Added Effeciency 25 to 35 %. Tags: Surface Mount. More details for MwT-8 can be seen below.

Product Specifications

Product Details

  • Part Number
    MwT-8
  • Manufacturer
    MicroWave Technology
  • Description
    16 GHz High Power GaAs FET

General Parameters

  • Transistor Type
    MESFET
  • Technology
    GaAs
  • Application Industry
    Cellular
  • Application
    Telephone, PCN, Point-to-point, Communication Links
  • CW/Pulse
    CW
  • Frequency
    DC to 12 GHz
  • P1dB
    27 to 28 dBm
  • OIP3
    40 dBm
  • Small Signal Gain
    7 to 7.5 dB
  • Power Added Effeciency
    25 to 35 %
  • Transconductance
    144 to 160 mS
  • Input Power
    480 to 720 mW
  • Drain Gate Voltage
    -12 to -8 V (Breakdown)
  • Voltage - Gate-Source (Vgs)
    -12 to -6 V (Breakdown)
  • Drain Current
    120 to 480 mA (Saturated)
  • Impedance Zl
    50 Ohms
  • Impedance Zs
    50 Ohms
  • Voltage Rating
    -5 to -2 V (Pinch-off)
  • Thermal Resistance
    45 Degrees C/W
  • Package Type
    Surface Mount
  • Package
    Chip
  • Dimension
    673 x 305 um
  • Grade
    Commercial, Military, Space Qualified
  • Storage Temperature
    -65 to 150 Degree C

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