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N-Channel Field Effect Transistor from 30 to 40V

SKU: 2N4856UB

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The 2N4856UB from Microchip Technology is a RF Transistor with Supply Voltage 40 V, Voltage - Drain-Source (Vdss) 0.75 V, Voltage - Gate-Source (Vgs) -40 V(Gate-Source Breakdown Voltage), Drain Current 50 to 175 mA, Collector Current (Ic) 0.175 A. Tags: Surface Mount. More details for 2N4856UB can be seen below.

Product Specifications

Product Details

  • Part Number
    2N4856UB
  • Manufacturer
    Microchip Technology
  • Description
    N-Channel Field Effect Transistor from 30 to 40V

General Parameters

  • Transistor Type
    FET
  • Technology
    Si
  • CW/Pulse
    CW
  • Supply Voltage
    40 V
  • Drain Gate Voltage
    40 V
  • Voltage - Drain-Source (Vdss)
    0.75 V
  • Voltage - Gate-Source (Vgs)
    -40 V(Gate-Source Breakdown Voltage)
  • Drain Current
    50 to 175 mA
  • Collector Current (Ic)
    0.175 A
  • Power Dissipation (Pdiss)
    0.36 to 1.8 W
  • Input Capacitance
    18 pF
  • On Resistance
    25 Ohms
  • Output Capacitance
    8 pF
  • Package Type
    Surface Mount
  • Package
    UB
  • Operating Temperature
    -65 to 200 Degree C
  • Storage Temperature
    -65 to 200 Degree C

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