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35V, N-Channel Field Effect Transistor

SKU: 2N4416A

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The 2N4416A from Microchip Technology is a RF Transistor with Supply Voltage 35 V, Voltage - Drain-Source (Vdss) 35 V, Voltage - Gate-Source (Vgs) -35 V(Gate-Source Breakdown Voltage), Drain Current 15 mA, Collector Current (Ic) 0.01 A. Tags: Through Hole. More details for 2N4416A can be seen below.

Product Specifications

Product Details

  • Part Number
    2N4416A
  • Manufacturer
    Microchip Technology
  • Description
    35V, N-Channel Field Effect Transistor

General Parameters

  • Transistor Type
    FET
  • Technology
    Si
  • CW/Pulse
    CW, Pulse
  • Supply Voltage
    35 V
  • Drain Gate Voltage
    35 V
  • Voltage - Drain-Source (Vdss)
    35 V
  • Voltage - Gate-Source (Vgs)
    -35 V(Gate-Source Breakdown Voltage)
  • Drain Current
    15 mA
  • Collector Current (Ic)
    0.01 A
  • Power Dissipation (Pdiss)
    300 mW
  • Input Capacitance
    4 pF
  • Output Capacitance
    2 pF
  • Package Type
    Through Hole
  • Package
    TO-72
  • Operating Temperature
    -65 to 200 Degree C
  • Storage Temperature
    -65 to 200 Degree C

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