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Hermetically Sealed, Radiation-Hard Transistor from 0.5 to 0.7 mA

SKU: 4N47

RF Transistor by ISOCOM (31 more products)
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4N47 Image

The 4N47 from ISOCOM is a RF Transistor with Gain 300 dB(DC current gain), Supply Voltage 0.7 to 1.5 V(Forward Voltage), Collector Current (Ic) 0.5 to 0.7 mA, Base Current (Ib) 30 uA(On State Collector Base), Power Dissipation (Pdiss) 60 to 300 mW. Tags: Through Hole. More details for 4N47 can be seen below.

Product Specifications

Product Details

  • Part Number
    4N47
  • Manufacturer
    ISOCOM
  • Description
    Hermetically Sealed, Radiation-Hard Transistor from 0.5 to 0.7 mA

General Parameters

  • Transistor Type
    MOS, CMOS
  • Technology
    GaAs
  • Application Industry
    Military, Space, Medical
  • Application
    Space Radiation Equipment, Military, High Reliability System, Medical Instruments, MOS, CMOS Applications, Logic Interfacing, Data Transmission, Power Supply, Modems
  • CW/Pulse
    CW
  • Gain
    300 dB(DC current gain)
  • Collector Base Voltage
    45 to 70 V(Collector-Base Breakdown Voltage)
  • Collector Emmiter Voltage
    40 to 90 V(Collector-Emitter Breakdown Voltage)
  • Supply Voltage
    0.7 to 1.5 V(Forward Voltage)
  • Breakdown Voltage
    7 V(Emitter-Collector Breakdown Voltage)
  • Collector Current (Ic)
    0.5 to 0.7 mA
  • Base Current (Ib)
    30 uA(On State Collector Base)
  • Power Dissipation (Pdiss)
    60 to 300 mW
  • Input Capacitance
    5 pF
  • Output Capacitance
    5 pF
  • Package Type
    Through Hole
  • Package
    TO-5 6-pin
  • Operating Temperature
    -65 to 125 Degree C
  • Storage Temperature
    -65 to 125 Degree C

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