The EPC2105 from Efficient Power Conversion is a RF Transistor with Voltage - Drain-Source (Vdss) 80 V, Voltage - Gate-Source (Vgs) -4 to 6 V, Drain Current 80 A, Drain Leakage Current (Id) 0.003 to 0.2 mA (Drain-Source), Gate Leakage Current (Ig) 0.005 to 9 mA (Gate to Source). More details for EPC2105 can be seen below.
