The EPC2102 from Efficient Power Conversion is a RF Transistor with Voltage - Drain-Source (Vdss) 60 V, Voltage - Gate-Source (Vgs) -4 to 6 V, Drain Current 30 A, Drain Leakage Current (Id) 0.008 to 0.4 mA (Drain-Source), Gate Leakage Current (Ig) 0.008 to 7 mA (Gate to Source). More details for EPC2102 can be seen below.
