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Radiation-Hardened P-Channel Power MOSFET

SKU: STRH40P10

Space Qualified MOSFETs by STMicroelectronics (5 more products)
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STRH40P10 Image

The STRH40P10 from STMicroelectronics is a Space-Qualified MOSFET that has a drain-source voltage of 100 V. It has a continuous drain current of 34 A, a pulsed drain current of 136 A, and on-state drain-source resistance of 75 mohm. This radiation-hardened STripFET technology MOSFET has a gate charge of 162 nC and sustains a high level of total ionized dose (TID) and immunity to heavy ion effects. It had fast switching and is 100% avalanche tested. This ESCC-certified P-channel power MOSFET has a mass of 10 grams and is ideal for space applications.

Product Specifications

Product Details

  • Part Number
    STRH40P10
  • Manufacturer
    STMicroelectronics
  • Description
    Radiation-Hardened P-Channel Power MOSFET

General Parameters

  • Segment
    Satellite
  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    34 A
  • Drain Source Resistance
    75 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.6 to 5.2 V
  • Gate Charge
    194 nC
  • Power Dissipation
    176 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-254AA

Technical Documents
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