The STRH40N6 from STMicroelectronics is a Space-Qualified MOSFET that has a drain-source voltage of 60 V. It has a continuous drain current of 30 A, a pulsed drain current of 120 A, and an on-state drain-source resistance of 36 mohm. This MOSFET is single event effects (SEE) radiation hardened and has a radiation tolerance TID of up to 50 krad. It has a gate charge of 43 nC and is 100% avalanche-tested. This ESCC-certified N-channel power MOSFET is available in SMD.5 packaging and suitable for in-satellite power conversion, motor control, and power switch circuits.
