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100 V Radiation Hardened P-Channel MOSFET

SKU: STRH12P10

Space Qualified MOSFETs by STMicroelectronics (5 more products)
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The STRH12P10 from STMicroelectronics is a Space Qualified MOSFET that is designed for demanding space applications. This MOSFET has a continuous drain current of 12 A and a drain-source breakdown voltage of 100 V. It has a drain-source resistance of 300 milliohms and power dissipation of 75 W. The MOSFET has a gate-source voltage of -18 to +18 V and a gate-source threshold voltage of 1.6 to 5.2 V. This MOSFET is available in a hermetic package and is ideal for applications such as in-satellite power conversion, motor control, and power switch circuits.?

Product Specifications

Product Details

  • Part Number
    STRH12P10
  • Manufacturer
    STMicroelectronics
  • Description
    100 V Radiation Hardened P-Channel MOSFET

General Parameters

  • Segment
    Satellite
  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    300 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -18 to 18 V
  • Gate Source Threshold Voltage
    1.6 to 5.2 V
  • Gate Charge
    48 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-257

Technical Documents
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