The STRH100N6 from STMicroelectronics is a Space Qualified MOSFETs that has a drain-source voltage of 60 V and a continuous drain current of 40 A. It has a pulsed drain current of 160 A and an on-state drain-source resistance of 24 mohm. This MOSFET has a radiation tolerance TID of up to 50 krad which is single event effects (SEE) radiation hardened and is 100% avalanche-tested. It has a gate source voltage of ±20 V and a gate source threshold voltage range of 1.5-5 V. This ESCC-certified N-channel power MOSFET has hermetic packaging and suitable for in-satellite power conversion, motor control, and power switch circuits.
