The STRH100N10 from STMicroelectronics is a Space Qualified MOSFETs that has a drain-source voltage of 100 V and a continuous drain current of 30-48 A. It has a pulsed drain current of 192 A and an on-state drain-source resistance of 63 mohm. This MOSFET has a radiation tolerance TID of up to 50 krad which is single event effects (SEE) radiation hardened and is 100% avalanche-tested. It has a gate source voltage of ±20 V and a gate source threshold voltage range of 1.5-5.5 V. This ESCC 5205/021-certified N-channel power MOSFET has hermetic packaging and suitable for in-satellite power conversion applications.
