The IRHYS9A97034CM from Infineon Technologies is a Space-Qualified MOSFET with a drain-to-source breakdown voltage of -60 V and a continuous drain current of up to -30 A. This p-channel MOSFET has a gate-to-source voltage of +/- 20 V and a maximum power dissipation of 75 W. It has an improved avalanche energy of 7.5 mJ (repetitive) and its design features R9 Superjunction technology. The MOSFET is Single event effect (SEE) hardened up to LET of 91.3 MeV·cm2 /mg and is qualified according to MIL-PRF-19500 for space applications. It has a static drain to source on-state resistance of 40 mOhm and a total gate charge of 46 nC. The MOSFET has a mass of 4.3 g and is suitable for applications such as power distribution, linear regulator, latching current limiter, and load and protection switch.
