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100 V, N-Channel Enhancement Mode MOSFET

SKU: IRHY57130CM

Space Qualified MOSFETs by Infineon Technologies (301 more products)
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IRHY57130CM Image

The IRHY57130CM from Infineon Technologies is a Space Qualified MOSFETs with Continous Drain Current 18 A, Drain Source Resistance 70 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRHY57130CM can be seen below.

Product Specifications

Product Details

  • Part Number
    IRHY57130CM
  • Manufacturer
    Infineon Technologies
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General Parameters

  • Segment
    Satellite
  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    18 A
  • Drain Source Resistance
    70 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    50 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-257AA

Technical Documents
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