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IRHQ6110

Space Qualified MOSFETs by Infineon Technologies (301 more products)
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IRHQ6110 Image

The IRHQ6110 from Infineon Technologies is a Space Qualified MOSFETs with Continous Drain Current -2.2 to 3 A, Drain Source Resistance 600 to 1100 milliohm, Drain Source Breakdown Voltage -100 to 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to 4 V. Tags: Surface Mount. More details for IRHQ6110 can be seen below.

Product Specifications

Product Details

  • Part Number
    IRHQ6110
  • Manufacturer
    Infineon Technologies
  • Description
    -100 to 100 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

General Parameters

  • Segment
    Satellite
  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Quad
  • Continous Drain Current
    -2.2 to 3 A
  • Drain Source Resistance
    600 to 1100 milliohm
  • Drain Source Breakdown Voltage
    -100 to 100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to 4 V
  • Gate Charge
    17 nC
  • Power Dissipation
    12 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    28-pin LCC

Technical Documents
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