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60 V, N-Channel Enhancement Mode MOSFET

SKU: IRHNS9A7064

Space Qualified MOSFETs by Infineon Technologies (301 more products)
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IRHNS9A7064 Image

The IRHNS9A7064 from Infineon Technologies is a Space Qualified MOSFETs with Continous Drain Current 100 A, Drain Source Resistance 4 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for IRHNS9A7064 can be seen below.

Product Specifications

Product Details

  • Part Number
    IRHNS9A7064
  • Manufacturer
    Infineon Technologies
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General Parameters

  • Segment
    Satellite
  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    4 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    194 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    SupIR-SMD

Technical Documents
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