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-100 V, P-Channel Enhancement Mode MOSFET

SKU: IRHNJ9130

Space Qualified MOSFETs by Infineon Technologies (301 more products)
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IRHNJ9130 Image

The IRHNJ9130 from Infineon Technologies is a Space Qualified MOSFETs with Continous Drain Current -11 A, Drain Source Resistance 340 milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for IRHNJ9130 can be seen below.

Product Specifications

Product Details

  • Part Number
    IRHNJ9130
  • Manufacturer
    Infineon Technologies
  • Description
    -100 V, P-Channel Enhancement Mode MOSFET

General Parameters

  • Segment
    Satellite
  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -11 A
  • Drain Source Resistance
    340 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    45 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    SMD-0.5

Technical Documents
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