The IRHNJ6S7234 from Infineon Technologies is a Space Qualified MOSFETs with a drain-to-source breakdown voltage of 250 V. It has a gate threshold voltage of 2-4 V and a continuous drain current value of 7.8-12.4 A. This power MOSFET has a pulsed drain current of 49.6 A and a low static drain-to-source on-state resistance of 0.21 Ohms. It has a low total gate charge of 50 nC and a power dissipation of 75 W. The MOSFET is a Single event effect (SEE) hardened and hermetically sealed with light weight surface mount package. It is qualified according to MIL-STD-750 for space applications and features very low RDS(on), faster switching with reduced power loss and increases power density for high speed switching applications such as DC-DC converters and motor controllers.
