The IRHNJ6S7130 from Infineon Technologies is a Space Qualified MOSFETs with a drain-to-source breakdown voltage of 100 V. It has a gate threshold voltage of 2-4 V and a continuous drain current value of 19-22 A. This power MOSFET has a pulsed drain current of 88 A and a low static drain-to-source on-state resistance of 0.042 Ohms. It has a low total gate charge of 50 nC and a power dissipation of 75 W. The MOSFET is a Single event effect (SEE) hardened and hermetically sealed with light weight surface mount package. It is qualified according to MIL-PRF-19500 for space applications and is suitable for DC-DC converters and motor controllers.
