The IRHNA6S7160 from Infineon Technologies is a Space-Qualified MOSFET designed for space applications. It has a drain-source breakdown voltage of 100 V, a continuous drain current of 56 A, and a pulsed drain current of 224 A. This hermetically-sealed MOSFET has a low static on-state resistance of 0.010 ohms and a maximum power consumption of 250 W. It has a low total gate charge of 170 nC and a gate-to-source voltage of +/- 20 V. The MOSFET has a radiation tolerance TID of up to 100 kRads (Si) and is Single Event Effect (SEE) hardened with useful performance up to LET of 60 MeV/mg/cm2. It is qualified according to Class 3A per MIL-STD-750 for space applications and features voltage control, fast switching, ease of paralleling, and temperature stability of electrical parameters. This n-channel enhancement mode MOSFET comes in a ceramic package that weighs 3.3 g and has a low gate charge that reduces the power losses in switching applications such as DC-DC converters and motor controllers.