The IRHMK57160 from Infineon Technologies is a Space Qualified MOSFET with a gate-to-source voltage of +/- 20 V and a drain-to-source breakdown voltage of 100 V. This power MOSFET has a continuous drain current of 45 A and a pulsed drain current of 180 A. It has a gate threshold voltage of 2-4 V and a maximum power dissipation of 208 W. The MOSFET is Single Event Effect (SEE) hardened up to 100 kRads(Si) and has a low RDS(on) of 0.014 Ohms. It comes in a hermetically sealed surface mount package and has a mass of 8 g. The MOSFET is suitable for switching applications such as DC-DC converters and motor controllers.