The IRHM7460SE from Infineon Technologies is a Space Qualified MOSFET with a drain-to-source breakdown voltage of 500 V and a gate-to-source voltage of +/- 20 V. This radiation-hardened MOSFET has a continuous drain current range of 11.7-18 A and a pulsed drain current of 72 A. It has a gate-to-source threshold voltage range of 2.5-4.5 V and a drain-to-source resistance of 360 milliohm. The MOSFET has a radiation tolerance TID of up to 100 krad (Si) and is single event effect (SEE) hardened. It has a total gate charge of 180 nC and a maximum power dissipation of 250 W. It has a rise time of 93 ns and a fall time of 59 ns. The MOSFET has a hermetically sealed ceramic package and is qualified according to MIL-PRF-19500 for space applications. It is ideal for applications such as DC-DC converters and motor control.