The IRHLUC770Z4 from Infineon Technologies is a Space Qualified N-Channel Enhancement Mode MOSFET that is designed for demanding space applications. This MOSFET has a continuous drain current of 0.89 A and a drain-source breakdown voltage of 60 V. It has a drain-source resistance of 0.75 ohms and power dissipation of 1 W. The MOSFET has a gate charge of 3.6 nC and a gate-source threshold voltage of up to 2 V. It meets MIL-PRF-19500 qualification standards. This MOSFET is available in a surface mount package and is ideal for applications such as DC-DC converters, motor drives, and power devices in space and radiation environments.