The IRHLQ7S7214 from Infineon Technologies is a Space Qualified MOSFET with a drain-to-source breakdown voltage of 250 V and a gate-to-source voltage of +/- 10 V. This radiation-hardened MOSFET has a continuous drain current range of 1.6-2.6 A and a pulsed drain current of 10.4 A. It has a rise time of 57 ns and a fall time of 55 ns. The MOSFET has a radiation tolerance TID of up to 100 krad(Si) and is single event effect (SEE) hardened. It has a total gate charge of 18 nC and a maximum power dissipation of 12 W. The MOSFET comes in a hermetically sealed ceramic package and is qualified according to MIL-PRF-19500 for space applications. It is ideal for applications such as DC-DC converters and motor drives and provides a simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.