The IRHLNA797064 from Infineon Technologies is a Space-Qualified MOSFET that is designed for power devices in space and other radiation environments. It has a drain-source breakdown voltage of -60 V, a continuous drain current of -56 A, and a pulsed drain current of -224 A. This hermetically-sealed MOSFET has a low static on-state resistance of 17 mohms and a total power consumption of 250 W. It has a low total gate charge of 130 nC. It is a lightweight, single-event effect (SEE) hardened with ceramic packaging. It has simple drive requirements and fast-switching. It is qualified according to MIL-PRF-19500 for space applications and s ideal when used to interface directly with most logic gates, linear ICs, micro-controllers, and other device types that operate from a 3.3-5V source. This p-channel enhancement mode MOSFET weighs 3.3 g and is ideal for DC-DC converter and Motor drives applications.
