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20 V, N-Channel Enhancement Mode MOSFET

SKU: IRHLF87Y20

Space Qualified MOSFETs by Infineon Technologies (301 more products)
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IRHLF87Y20 Image

The IRHLF87Y20 from Infineon Technologies is a Space Qualified MOSFETs with Continous Drain Current 12 A, Drain Source Resistance 32 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 1 to 2.3 V. Tags: Through Hole. More details for IRHLF87Y20 can be seen below.

Product Specifications

Product Details

  • Part Number
    IRHLF87Y20
  • Manufacturer
    Infineon Technologies
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General Parameters

  • Segment
    Satellite
  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    12 A
  • Drain Source Resistance
    32 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    1 to 2.3 V
  • Gate Charge
    27 nC
  • Power Dissipation
    15.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-205AF

Technical Documents
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