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250 V, N-Channel Enhancement Mode MOSFET

SKU: IRHLF7S7214

Space Qualified MOSFETs by Infineon Technologies (301 more products)
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IRHLF7S7214 Image

The IRHLF7S7214 from Infineon Technologies is a Space Qualified MOSFETs with Continous Drain Current 3.3 A, Drain Source Resistance 1000 milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 1 to 2 V. Tags: Through Hole. More details for IRHLF7S7214 can be seen below.

Product Specifications

Product Details

  • Part Number
    IRHLF7S7214
  • Manufacturer
    Infineon Technologies
  • Description
    250 V, N-Channel Enhancement Mode MOSFET

General Parameters

  • Segment
    Satellite
  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.3 A
  • Drain Source Resistance
    1000 milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    1 to 2 V
  • Gate Charge
    18 nC
  • Power Dissipation
    22.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-205AF

Technical Documents
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