The IRHG6110 from Infineon Technologies is a Space Qualified MOSFET with a drain-to-source breakdown voltage of +/- 100 V and a gate-to-source voltage of +/- 20 V. This radiation-hardened MOSFET has a continuous drain current range of -0.75 to 1 A and a gate threshold voltage of -4 to 4 V. It has a pulsed drain current range of -3 to 4 A and a drain-to-source resistance of 0.6-1.2 Ohms. The MOSFET has a radiation tolerance TID of up to 100 krad (Si) and is single event effect (SEE) hardened. It has a total gate charge of 11-15 nC and a maximum power dissipation of 1.4 W. The MOSFET has a rise time range of 16-19 ns and a fall time range of 45-51 ns. It comes in a hermetically sealed ceramic package and is qualified according to MIL-STD-750 for space applications. The MOSFET is ideal for applications such as DC-DC converters and motor controllers.
