23 W X-Band High Power Amplifier

SKU: CHA8054-99F

Note : Your request will be directed to United Monolithic Semiconductors.

The CHA8054-99F from United Monolithic Semiconductors is a RF Amplifier with Frequency 7.7 to 8.6 GHz, Gain 27 dB (Linear Gain), Output Power 43.6 dBm, Output Power 23 W, Input Power 33 dBm. Tags: Die, Chip, Power Amplifier. More details for CHA8054-99F can be seen below.

Product Specifications

Product Details

  • Part Number
    CHA8054-99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    23 W X-Band High Power Amplifier

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Communication Systems
  • Frequency
    7.7 to 8.6 GHz
  • Gain
    27 dB (Linear Gain)
  • Output Power
    43.6 dBm
  • Output Power
    23 W
  • Input Power
    33 dBm
  • Input Power
    1.99 W
  • PAE
    50%
  • Return Loss
    10 to 12 dB
  • Input Return Loss
    12 dB
  • Supply Voltage
    28 V
  • Current Consumption
    2 A
  • Quiscent Current
    900 mA
  • Transistor Technology
    HEMT
  • Technology
    GaN
  • Package Type
    Die, Chip
  • Dimensions
    5.14 x 4.22 x 0.1 mm
  • Operating Temperature
    -40 to 100 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

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