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17.3 to 21.3 GHz GaN Power Amplifier

SKU: CHA6282-QCB

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The CHA6282-QCB from United Monolithic Semiconductors is a RF Amplifier with Frequency 17.3 to 21.5 GHz, Gain 30 dB (Linear), Small Signal Gain 30 dB, Saturated Power 3.98 W, Input Power 18 to 20 dBm. Tags: Surface Mount, Power Amplifier. More details for CHA6282-QCB can be seen below.

Product Specifications

Product Details

  • Part Number
    CHA6282-QCB
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    17.3 to 21.3 GHz GaN Power Amplifier

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Frequency
    17.3 to 21.5 GHz
  • Gain
    30 dB (Linear)
  • Small Signal Gain
    30 dB
  • Saturated Power
    3.98 W
  • Input Power
    18 to 20 dBm
  • Input Power
    0.0631 to 0.1 W
  • PAE
    0.28
  • Return Loss
    15 dB
  • Input Return Loss
    15 dB
  • Output Return Loss
    15 dB
  • Supply Voltage
    18 V (Drain)
  • Quiscent Current
    0.26 A (Drain)
  • Transistor Technology
    HEMT
  • Technology
    GaN on SiC
  • Package Type
    Surface Mount
  • Package
    28 Leads QFN 5x5mm
  • Dimensions
    5 x 5 mm
  • Space Qualified
    Yes
  • Operating Temperature
    -40 to 95 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

Technical Documents
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