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GaAs pHEMT Broadband Low Noise Amplifier from 2 to 18 GHz

SKU: KA115

RF Amplifier by Micross (7 more products)
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KA115 Image

The KA115 from Micross is a RF Amplifier with Frequency 2 to 18 GHz, Gain 17 dB, Gain Flatness 2 dB, Noise Figure 2 to 7 dB, P1dB 0.02 to 0.025 W. Tags: Surface Mount, Power Amplifier, Driver Amplifier, Low Noise Amplifier, Gain Block Amplifier. More details for KA115 can be seen below.

Product Specifications

Product Details

  • Part Number
    KA115
  • Manufacturer
    Micross
  • Description
    GaAs pHEMT Broadband Low Noise Amplifier from 2 to 18 GHz

General Parameters

  • Type
    Power Amplifier, Driver Amplifier, Low Noise Amplifier, Gain Block Amplifier
  • Configuration
    IC/MMIC/SMT
  • Frequency
    2 to 18 GHz
  • Gain
    17 dB
  • Gain Flatness
    2 dB
  • Noise Figure
    2 to 7 dB
  • P1dB
    0.02 to 0.025 W
  • IP3
    25 to 29 dBm
  • IP3
    0.316 to 0.795 W
  • Saturated Power
    0.051 to 0.064 W
  • Input Power
    22 dBm
  • Input Power
    0.158 W
  • Return Loss
    15 dB
  • Input Return Loss
    15 dB
  • Output Return Loss
    15 dB
  • Supply Voltage
    5 V
  • Current Consumption
    75 mA
  • Transistor Technology
    pHEMT
  • Technology
    GaAs
  • Package Type
    Surface Mount
  • Package
    SMT
  • Space Qualified
    Yes
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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