The HXSR01632 from Honeywell Aerospace is a Space Qualified Memory with a configuration of 512K x 32-bit memory. This monolithic static RAM is a high performance 524,288 word x 32-bit static random access memory that is fabricated with 150nm silicon-on-insulator CMOS (S150) radiation-hardened technology. It has a write access time of 9 ns and a storage capacity of 16 Mb. This monolithic static RAM has an average output current of 15 mA and has a package power dissipation of 2.5 W. It has a junction temperature of 175 deg C and a power consumption of 150 mW. The SRAM operates over the full military temperature range and requires a DC power supply of 1.8-3.3V. This space-qualified SRAM is available with CMOS-compatible I/O ports. The memory cell is single event upset hardened with four layer metal power busing and small collection volumes of SOI provide superior single event effect and dose rate hardening. It has a mass of 7 g and measures 21.67 x 28.91 x 4.01 mm. The SRAM is designed for use in low-voltage systems operating in radiation environments.