The HXSR01608 from Honeywell Aerospace is a Space Qualified Memory  that is configured as 2M x 8.It is a high performance 2,097,152 word x 8-bit static random access memory that is fabricated with 150nm silicon-on-insulator CMOS (S150) radiation-hardened technology. This SRAM has a write access time of 9 ns and a storage capacity of 16 Mb. This monolithic static RAM has an average output current of 15 mA and has a package power dissipation of 2.5 W. It has a junction temperature of 175 deg C and a power consumption of 150 mW. The SRAM operates over the full military temperature range and requires a DC power supply of 1.8-3.3V. This space-qualified SRAM is available with CMOS-compatible I/O ports. The memory cell is single event upset hardened with four layer metal power busing and small collection volumes of SOI provide superior single event effect and dose rate hardening.