The HXNV0100 from Honeywell Aerospace is a Space Qualified Memory with a configuration of 64K x 16 bit memory. This Magneto-Resistive Random Access Memory (MRAM) is a high performance 65,536 word x 16 bit memory that is fabricated with 150nm silicon-on-insulator (SOI) CMOS Underlayer Technology. It has a write access time of 140 ns and a storage capacity of 1 Mb. This radiation hardened RAM has an average output leakage current of 100 μA and has a package power dissipation of 2.5 W. It has a junction temperature of 175 deg C and a require dual power supply of 1.8-3.3 V. This non volatile MRAM has an integrated power up and power down circuitry that controls the condition of the device during power transitions. It measures 52.32 x 52.32 x 4.83 mm with 64 Lead Shielded Ceramic Quad Flat Pack. The SRAM is designed for use in low-voltage systems operating in radiation environments.
